2012/07/26 v.1 page 1 sp n 8 9 19 n-channel enhancement mode mosfet description applications the spn8919 is the n-channel logic enhancement mod e power field effect transistor which is produced usi ng super high cell density dmos trench technology. the spn89 10 has been designed specifically to improve the overa ll efficienc y of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. high frequency small power switching for mb/nb/vga network dc/dc power system load switch features pin configuration sot-89 1 2 3 g d s part marking 100v/2a, r ds(on) = 180m ? @v gs = 10v high density cell design for extremely low rds (on) exceptional on-resistance and maximum dc current capability sot-89 package design
2012/07/26 v.1 page 2 sp n 8 9 19 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 d drain 3 s source ordering information part number package part marking SPN8919S89RGB sot-89 spn8919 spn8910s89rgb : tape reel ; pb C free ; halogen - f ree absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 100 v gate Csource voltage v gss 20 v t a =25 2.8 continuous drain current(t j =150 ) t a =70 i d 2.2 a pulsed drain current i dm 10 a power dissipation t a =25 p d 1.5 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 85 /w
2012/07/26 v.1 page 3 sp n 8 9 19 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 100 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =80v,v gs =0v 25 zero gate voltage drain current i dss v ds =80v,v gs =0v t j =125 250 ua on-state drain current i d(on) v ds 5v,v gs =10v 2.2 a drain-source on-resistance r ds(on) v gs = 10v,i d =2a 0.160 0.180 ? forward transconductance gfs v ds =5v,i d =5a 5.6 s diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g 10 16 gate-source charge q gs 2.5 gate-drain charge q gd v ds =50v,v gs =10v i d = 2a 4.5 nc input capacitance c iss 430 output capacitance c oss 56 reverse transfer capacitance c rss v ds =15v,v gs =0v f=1mhz 35 pf t d(on) 6.5 turn-on time t r 10 t d(off) 13 turn-off time t f v dd =50v, i d =2a, v gen =10v, r g =3.3 ? 3.4 ns
2012/07/26 v.1 page 4 sp n 8 9 19 n-channel enhancement mode mosfet typical characteristics
2012/07/26 v.1 page 5 sp n 8 9 19 n-channel enhancement mode mosfet typical characteristics
2012/07/26 v.1 page 6 sp n 8 9 19 n-channel enhancement mode mosfet typical characteristics
2012/07/26 v.1 page 7 sp n 8 9 19 n-channel enhancement mode mosfet sot-89 package outline
2012/07/26 v.1 page 8 sp n 8 9 19 n-channel enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2012\ sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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